Growth and properties of InGaN nanoscale islands on GaN

Strong photoluminescence and radiative recombination lifetimes longer than 1 ns at room temperature have been observed in GaN/Si/InGaN/GaN structures containing InGaN submicron islands. The flat islands, with a width at their base in the order of 200 nm and a height in the order of 1—2 nm, grow in a spiral mode around dislocations with partial or pure screw character after a passivation of the GaN surface by a preflow of disilane. Their surface density is comparable to the dislocation density of the GaN layer in the order of 108—109 cm~2. ( 1998 Elsevier Science B.V. All rights reserved.